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ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g $(*' #$% tm 3 power-transistor features 9 # ( ! , , % * , - 0 + ! * * % 4 % * 9 6 # % * * % , 2 ' ! 2 % # ( ! 0 ' % 6 r ds(on) product (fom) 9 % 0 7 * - 5 - , 0 % 1 ) 1 2 ! , # % r ds(on) 9 8 - . % 0 ! 2 ) , ' 2 % + . % 0 ! 2 3 0 % 9 " & 0 % % * % ! $ . * ! 2 ) , ' - # - + . * ) ! , 2 9 3 ! * ) & ) % $ ! # # - 0 $ ) , ' 2 - 1) for target application 9 ! * - ' % , & 0 % % ! # # - 0 $ ) , ' 2 - 9 $ % ! * & - 0 ( ) ' ( & 0 % / 3 % , # 7 1 5 ) 2 # ( ) , ' ! , $ 1 7 , # ( 0 - , - 3 1 0 % # 2 ) & ) # ! 2 ) - , maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 64 a t c =100 c 46 pulsed drain current 2) i d,pulse t c =25 c 256 avalanche energy, single pulse e as i d =47 a, r gs =25 # 320 mj gate source voltage v gs 20 v power dissipation p tot t c =25 c 300 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 2) see figure 3 value 1) j-std20 and jesd22 v ds 250 v r ds(on),max 20 m # i d 64 a product summary type ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g package pg-to263-3 pg-to220-3 pg-to262-3 marking 200n25n 200n25n 200n25n rev. 2.3 page 1 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.5 k/w r thja minimal footprint - - 62 6 cm2 cooling area 3) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 250 - - v gate threshold voltage v gs(th) v ds = v gs , i d =270 a 2 3 4 zero gate voltage drain current i dss v ds =200 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =200 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =64 a - 17.5 20 m # gate resistance r g - 2.4 - # transconductance g fs | v ds |>2| i d | r ds(on)max , i d =64 a 61 122 - s values thermal resistance, junction - ambient 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.3 page 2 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 5340 7100 pf output capacitance c oss - 297 395 reverse transfer capacitance c rss - 4 - turn-on delay time t d(on) - 18 - ns rise time t r - 20 - turn-off delay time t d(off) - 45 - fall time t f - 12 - gate charge characteristics 4) gate to source charge q gs - 22 - nc gate to drain charge q gd - 7 - switching charge q sw - 13 - gate charge total q g - 64 86 gate plateau voltage v plateau - 4.2 - v output charge q oss v dd =100 v, v gs =0 v - 135 179 nc reverse diode diode continous forward current i s - - 64 a diode pulse current i s,pulse - - 256 diode forward voltage v sd v gs =0 v, i f =64 a, t j =25 c - 1 1.2 v reverse recovery time t rr - 170 - ns reverse recovery charge q rr - 780 - nc 4) see figure 16 for gate charge parameter definition v r =100 v, i f =25 a, d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =100 v, f =1 mhz v dd =100 v, v gs =10 v, i d =25 a, r g =1.6 # v dd =100 v, i d =25 a, v gs =0 to 10 v rev. 2.3 page 3 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs :
3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 z t h j c [ k / w ] t p [s] 0 40 80 120 160 200 240 280 320 0 50 100 150 200 p t o t [ w ] t c [c] 0 10 20 30 40 50 60 70 0 50 100 150 200 i d [ a ] t c [c] 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 i d [ a ] v ds [v] rev. 2.3 page 4 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 7 v 10 v 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 r d s ( o n ) [ m w ] i d [a] 25 c 175 c 0 20 40 60 80 100 120 140 0 2 4 6 8 i d [ a ] v gs [v] 0 20 40 60 80 100 120 140 160 180 0 25 50 75 100 125 g f s [ s ] i d [a] 4.5 v 5 v 7 v 10 v 0 25 50 75 100 125 150 0 1 2 3 4 5 i d [ a ] v ds [v] rev. 2.3 page 5 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =64 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98% 0 10 20 30 40 50 60 70 -60 -20 20 60 100 140 180 r d s ( o n ) [ m w ] t j [c] 270 a 2700 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 v g s ( t h ) [ v ] t j [c] ciss coss crss 10 1 10 2 10 3 10 4 0 40 80 120 160 c [ p f ] v ds [v] 25 c 175 c 25c, 98% 175c, 98% 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 i f [ a ] v sd [v] rev. 2.3 page 6 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 # v gs =f( q gate ); i d =25 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 50 v 125 v 200 v 0 2 4 6 8 10 0 20 40 60 80 v g s [ v ] q gate [nc] 220 230 240 250 260 270 280 290 -60 -20 20 60 100 140 180 v b r ( d s s ) [ v ] t j [c]
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g pg-to220-3: outline rev. 2.3 page 8 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g pg-to263-3: outline rev. 2.3 page 9 2010-10-19
ipb200n25n3 g ipp200n25n3 g ipi200n25n3 g pg-to262-3: outline rev. 2.3 page 10 2010-10-19
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